june 2013 fdms36101l_f085 n-channel power trench ? mosfet ?2013 fairchild semiconductor corporation fdms36101l_f085 rev. c1 www.fairchildsemi.com 1 fdms36101l_f085 n-channel power trench ? mosfet 100v, 38a, 26 m features ? typ r ds(on) = 18m at v gs = 10v, i d = 20a ? typ q g(tot) = 70nc at v gs = 10v, i d = 20a ? uis capability ? rohs compliant ? qualified to aec q101 applications ? automotive engine control ? powertrain management ? solenoid and motor drivers ? integrated starter/alternator ? primary switch for 12v systems mosfet maximum ratings t j = 25c unless otherwise noted symbol parameter ratings units v dss drain to source voltage 100 v v gs gate to source voltage 20 v i d drain current - continuous (v gs =10) (note 1) t c = 25c 38 a pulsed drain current t c = 25c see figure4 e as single pulse avalanche energy (note 2) 101 mj p d power dissipation 94 w derate above 25 o c0.63w/ o c t j , t stg operating and storage temperature -55 to + 175 o c r jc thermal resistance junction to case 1.6 o c/w r ja maximum thermal resistance junction to ambient (note 3) 50 o c/w package marking and ordering information device marking device package reel size tape width quantity fdms36101l fdms36101l_f085 power 56 13? 12mm 3000 units notes: 1: current is limited by bondwire configuration. 2: starting t j = 25c, l = 0.22mh, i as = 30.4a, v dd = 100v during inductor charging and v dd = 0v during time in avalanche 3: r ja is the sum of the junction-to-case and case-to-ambient thermal re sistance where the case thermal reference is defined as the s older mounting surface of the drain pins. r jc is guaranteed by design while r ja is determined by the user's board design. the maximum rating presented here is based on mounting on a 1 in 2 pad of 2oz copper. for current package drawing, please refer to the fairchild website at www.fairchildsemi.com/packaging
fdms36101l_f085 n-channel power trench ? mosfet fdms36101l_f085 rev. c1 www.fairchildsemi.com 2 electrical characteristics t j = 25c unless otherwise noted off characteristics on characteristics dynamic characteristics symbol parameter test conditions min typ max units b vdss drain to source breakdown voltage i d = 250 a, v gs = 0v 100 - - v i dss drain to source leakage current v ds = 100v, t j = 25 o c --1 a v gs = 0v t j = 175 o c(note 4) - - 1 ma i gss gate to source leakage current v gs = 20v - - 100 na v gs(th) gate to source threshold voltage v gs = v ds , i d = 250 a 1.0 1.84 3.0 v r ds(on) drain to source on resistance i d = 20a, v gs = 10v t j = 25 o c -1826m t j = 175 o c(note 4) - 45 65 m i d = 20a, v gs = 4.5v t j = 25 o c - 20 28 m t j = 175 o c(note 4) - 47 66 m c iss input capacitance v ds = 25v, v gs = 0v, f = 1mhz - 3945 - pf c oss output capacitance - 229 - pf c rss reverse transfer capacitance - 111 - pf r g gate resistance f = 1mhz - 1.2 - q g(tot) total gate charge at 10v v gs = 0 to 10v v dd = 50v i d = 20a -7084nc q g(th) threshold gate charge v gs = 0 to 2v - 6.8 9 nc q gs gate to source gate charge - 10.5 - nc q gd gate to drain ?miller? charge - 12 - nc switching characteristics drain-source diode characteristics notes: 4: the maximum value is specified by design at t j = 175c. product is not tested to this condition in production. t on turn-on time v dd = 50v, i d = 20a, v gs = 10v, r gen = 6 - - 24 ns t d(on) turn-on delay time - 15 - ns t r rise time - 7 - ns t d(off) turn-off delay time - 45 - ns t f fall time - 3 - ns t off turn-off time - - 57 ns v sd source to drain diode voltage i sd = 20a, v gs = 0v - - 1.25 v i sd = 10a, v gs = 0v - - 1.2 v t rr reverse recovery time i f = 20a, di sd /dt = 100a/ s, v dd =80v -4347ns q rr reverse recovery charge - 71 85 nc
fdms36101l_f085 n-channel power trench ? mosfet fdms36101l_f085 rev. c1 www.fairchildsemi.com 3 typical characteristics figure 1. normalized po wer dissipation vs case temperature 0 25 50 75 100 125 150 175 0.0 0.2 0.4 0.6 0.8 1.0 1.2 power dissipation multiplier t c , case temperature( o c) figure 2. maximum continuous drain current vs case temperature 25 50 75 100 125 150 175 200 0 10 20 30 40 50 current limited by silicon v gs = 10v i d , drain current (a) t c , case temperature( o c) figure 3. 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 0.01 0.1 1 single pulse d = 0.50 0.20 0.10 0.05 0.02 0.01 normalized thermal impedance, z t jc t, rectangular pulse duration(s) duty cycle - descending order 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z t ja x r t ja + t c p dm t 1 t 2 normalized maximum transient thermal impedance figure 4. peak current capability 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1 10 100 1000 v gs = 10v single pulse i dm , peak current (a) t, rectangular pulse duration(s) t c = 25 o c i = i 2 175 - t c 150 for temperatures above 25 o c derate peak current as follows:
fdms36101l_f085 n-channel power trench ? mosfet fdms36101l_f085 rev. c1 www.fairchildsemi.com 4 figure 5. 11 01 0 0 0.1 1 10 100 1000 100us 1ms 10ms i d , drain current (a) v ds , drain to source voltage (v) operation in this area may be limited by r ds(on) single pulse t j = max rated t c = 25 o c 100ms forward bias safe operating area 0.001 0.01 0.1 1 10 100 1 10 100 200 starting t j = 150 o c starting t j = 25 o c i as , avalanche current (a) t av , time in avalanche (ms) t av = (l)(i as )/(1.3*rated bv dss - v dd ) if r = 0 if r z 0 t av = (l/r)ln[(i as *r)/(1.3*rated bv dss - v dd ) +1] note: refer to fairchild application notes an7514 and an7515 figure 6. unclamped inductive switching c apability figure 7. 12345 0 25 50 75 100 t j = -55 o c t j = 25 o c t j = 175 o c pulse duration = 80 p s duty cycle = 0.5% max v dd = 5v i d , drain current (a) v gs , gate to source voltage (v) transfer characteristics figure 8. 0.00.20.40.60.81.01.2 0.01 0.1 1 10 100 t j = 25 o c t j = 175 o c v gs = 0 v i s , reverse drain current (a) v sd , body diode forward voltage (v) forward diode characteristics figure 9. 012345 0 20 40 60 80 100 v gs 10v top 8v 6v 5v 4.5v 4v bottom 80 p s pulse width tj=25 o c i d , drain current (a) v ds , drain to source voltage (v) saturation characteristics figure 10. 012345 0 20 40 60 80 5.5v i d , drain current (a) v ds , drain to source voltage (v) v gs 10v top 8v 6v 5v 4.5v 4v bottom 80 p s pulse width tj=175 o c saturation characteristics typical characteristics
fdms36101l_f085 n-channel power trench ? mosfet fdms36101l_f085 rev. c1 www.fairchildsemi.com 5 figure 11. 0246810 0 20 40 60 80 100 120 i d = 2 0a pulse duration = 80 p s duty cycle = 0.5% max r ds(on) , drain to source on-resistance ( m : ) v gs , gate to source voltage (v) t j = 25 o c t j = 175 o c rdson vs gate voltage figure 12. normalized rdson vs junction te mperature -80 -40 0 40 80 120 160 200 0.4 0.8 1.2 1.6 2.0 2.4 2.8 pulse duration = 80 p s duty cycle = 0.5% max i d = 20a v gs = 10v normalized drain to source on-resistance t j , junction temperature ( o c ) figure 13. -80 -40 0 40 80 120 160 200 0.0 0.3 0.6 0.9 1.2 1.5 v gs = v ds i d = 250 p a normalized gate threshold voltage t j , junction temperature( o c) normalized gate threshold voltage vs temperature figure 14. -80 -40 0 40 80 120 160 200 0.8 0.9 1.0 1.1 1.2 i d = 1ma normalized drain to source breakdown voltage t j , junction temperature ( o c) normalized drain to source breakdown voltage vs junction temperature figure 15. 0.1 1 10 100 1 10 100 1000 10000 f = 1mhz v gs = 0v c rss c oss c iss capacitance (pf) v ds , drain to source voltage ( v ) capacitance vs drain to source voltage figure 16. 0 20406080 0 2 4 6 8 10 v dd = 50v v dd = 40v i d = 20a v dd = 60v q g , gate charge(nc) v gs , gate to source voltage(v) gate charge vs gate to source voltage typical characteristics
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